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APTM20DHM08
Asymmetrical - bridge MOSFET Power Module
VDSS = 200V RDSon = 8mW max @ Tj = 25C ID = 208A @ Tc = 25C
Application * * * Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives
Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration
* * *
OUT1 G1 S1 VBUS 0/VBUS
Benefits * * * * Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile
S4 G4 OUT2
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Max ratings 200 208 155 832 30 8 781 100 50 3000 Unit V A V mW W A mJ
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
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APTM20DHM08 - Rev 1 May, 2004
APTM20DHM08
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 375A
VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V
Min 200 Tj = 25C
Tj = 125C
Typ
Max 150 750 8 5 150
Unit V A mW V nA
VGS = 10V, ID = 104A VGS = VDS, ID = 5mA VGS = 30 V, VDS = 0V
3
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Switching Energy u Turn-off Switching Energy v Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID = 208A Inductive switching @ 125C VGS = 15V VBus = 133V ID = 208A RG = 2.5W Inductive switching @ 25C VGS = 15V, VBus = 133V ID = 208A, RG = 2.5 Inductive switching @ 125C VGS = 15V, VBus = 133V ID = 208A, RG = 2.5 Min Typ 14.4 4.66 0.30 280 106 134 32 64 88 116 1698 1858 1872 1972 J J ns Max Unit nF
nC
Diode ratings and characteristics
Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 200A IF = 400A IF = 200A IF = 200A VR = 133V di/dt = 400A/s IF = 200A VR = 133V di/dt = 400A/s Min Tc = 75C Typ 200 1 1.4 0.9 60 110 400 1680 Max 1.1 V Unit A
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1.
APT website - http://www.advancedpower.com
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APTM20DHM08 - Rev 1 May, 2004
APTM20DHM08
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 Transistor Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.16 0.32 150 125 100 5 3.5 280 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Package outline
APT website - http://www.advancedpower.com
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APTM20DHM08 - Rev 1 May, 2004
APTM20DHM08
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.18 Thermal Impedance (C/W) 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 0.01 0.1 1 10 Single Pulse 0.9
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics
VGS=15V
700 600 ID, Drain Current (A) 500 400 300 200 100 0
Transfert Characteristics 600 ID, Drain Current (A) 500 400 300 200 100 0
TJ=25C TJ=125C TJ=-55C VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
10V 9V 8.5V 8V 7.5V 7V 6.5V
0
4
8
12
16
20
24
28
0
VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A)
Normalized to VGS=10V @ 104A
1 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V)
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 250 200 150 100 50 0
1.1 1
VGS=10V
VGS=20V
0.9 0.8 0 50 100 150 200 250 300 ID, Drain Current (A)
25
50
75
100
125
150
TC, Case Temperature (C)
APTM20DHM08 - Rev 1 May, 2004
APT website - http://www.advancedpower.com
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APTM20DHM08
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) Ciss 10000 Coss ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
limited by RDSon
VGS=10V ID= 104A
1000
100s 100 1ms 10 Single pulse TJ=150C 1 1 10 100 1000 VDS, Drain to Source Voltage (V) 10ms 100ms
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 14 ID=208A VDS=40V 12 TJ=25C 10 8 6 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC)
VDS=100V
VDS=160V
1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
APT website - http://www.advancedpower.com
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APTM20DHM08 - Rev 1 May, 2004
APTM20DHM08
Delay Times vs Current 120 100 td(on) and td(off) (ns) 80 60 40 20 0 0 50 100 150 200 250 300 350 ID, Drain Current (A)
VDS=133V RG=2.5 TJ=125C L=100H
Rise and Fall times vs Current 160 140
VDS=133V RG=2.5 TJ=125C L=100H
td(off) tr and tf (ns)
120 100 80 60 40 20 0 0
tf
td(on)
tr
50
100 150 200 250 300 350 ID, Drain Current (A)
Switching Energy vs Current 4 Switching Energy (mJ) 3 2 1 0 0 50 100 150 200 250 300 350 ID, Drain Current (A) Operating Frequency vs Drain Current
VDS=133V D=50% RG=2.5 TJ=125C VDS=133V RG=2.5 TJ=125C L=100H
Switching Energy vs Gate Resistance 6
VDS=133V ID=208A TJ=125C L=100H
Eoff
5 4 3 2 1 0
Eon and Eoff (mJ)
Eoff
Eon
Eon
5
10
15
20
25
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 1000 TJ=150C 100 TJ=25C 10
300 250 Frequency (kHz) 200 150 100 50 0 25 50 75 100 125 150 175 200 ID, Drain Current (A)
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
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APTM20DHM08 - Rev 1 May, 2004

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